HJT電(dian)(dian)池生(sheng)產(chan)設備(bei)，異(yi)質結(jie)電(dian)(dian)池整線解決方(fang)案，制絨(rong)清洗的(de)(de)主要目的(de)(de)。1去除硅(gui)片(pian)(pian)表(biao)(biao)面(mian)的(de)(de)污染和損傷層；2利用KOH腐(fu)蝕液對n型(xing)硅(gui)片(pian)(pian)進(jin)行各項(xiang)異(yi)性腐(fu)蝕，將Si（100）晶面(mian)腐(fu)蝕為(wei)Si（111）晶面(mian)的(de)(de)四方(fang)椎體(ti)結(jie)構(gou)(gou)（“金(jin)(jin)字塔(ta)結(jie)構(gou)(gou)”），即(ji)在(zai)硅(gui)片(pian)(pian)表(biao)(biao)面(mian)形(xing)成絨(rong)面(mian)，可將硅(gui)片(pian)(pian)表(biao)(biao)面(mian)反射率降低至12.5%以下，從而產(chan)生(sheng)更多的(de)(de)光生(sheng)載流(liu)子；3形(xing)成潔(jie)凈(jing)硅(gui)片(pian)(pian)表(biao)(biao)面(mian)，由(you)于HJT電(dian)(dian)池中硅(gui)片(pian)(pian)襯底表(biao)(biao)面(mian)直接為(wei)異(yi)質結(jie)界(jie)面(mian)的(de)(de)一部分，避免不潔(jie)凈(jing)引進(jin)的(de)(de)缺(que)陷和雜(za)質而帶來的(de)(de)結(jie)界(jie)面(mian)處(chu)載流(liu)子的(de)(de)復合。HJT電(dian)(dian)池的(de)(de)應用范圍廣闊，包括戶用、商用、工業(ye)等領(ling)域。北京自動化HJT金(jin)(jin)屬化設備(bei)

HJT是(shi)HeterojunctionTechnology的(de)(de)縮寫，是(shi)一種N型(xing)單晶雙面(mian)電(dian)(dian)(dian)池，具有工(gong)藝簡單、發電(dian)(dian)(dian)量(liang)高(gao)、度電(dian)(dian)(dian)成(cheng)(cheng)本低的(de)(de)優勢。異質結(jie)(jie)太陽(yang)能電(dian)(dian)(dian)池使用(yong)晶體硅(gui)片(pian)進(jin)行載流子傳輸和吸收，并(bing)使用(yong)非晶/或(huo)微晶薄硅(gui)層進(jin)行鈍化(hua)(hua)和結(jie)(jie)的(de)(de)形(xing)成(cheng)(cheng)。頂(ding)部(bu)電(dian)(dian)(dian)極由透(tou)明導電(dian)(dian)(dian)氧化(hua)(hua)物（TCO）層和金屬網格組成(cheng)(cheng)。異質結(jie)(jie)硅(gui)太陽(yang)能電(dian)(dian)(dian)池已經(jing)吸引了很多人的(de)(de)注意，因為(wei)它(ta)們可(ke)以達到(dao)很高(gao)的(de)(de)轉換效率，可(ke)達26.3%，由隆基團隊對HJT極限(xian)效率進(jin)行更(geng)新為(wei)28.5%，同(tong)時使用(yong)低溫度加(jia)工(gong)，通常整個過程低于(yu)(yu)200℃。低加(jia)工(gong)溫度允許處(chu)理厚度小于(yu)(yu)100微米的(de)(de)硅(gui)晶圓，同(tong)時保持(chi)高(gao)產量(liang)。南京太陽(yang)能HJT低銀HJT電(dian)(dian)(dian)池的(de)(de)應用(yong)可(ke)以提(ti)高(gao)能源(yuan)利(li)用(yong)效率，促(cu)進(jin)可(ke)持(chi)續發展。

HJT（Heterojunction with Intrinsic Thin Layer）是(shi)(shi)一(yi)種新型的(de)(de)(de)(de)(de)(de)(de)太(tai)陽能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)技(ji)術，相比(bi)于(yu)傳(chuan)統的(de)(de)(de)(de)(de)(de)(de)晶(jing)體硅太(tai)陽能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)，HJT具(ju)有(you)更高(gao)的(de)(de)(de)(de)(de)(de)(de)轉(zhuan)換效(xiao)率和(he)(he)(he)(he)更低的(de)(de)(de)(de)(de)(de)(de)溫度(du)系數。在(zai)(zai)壽命和(he)(he)(he)(he)可(ke)(ke)(ke)靠性(xing)(xing)方(fang)面，HJT也(ye)有(you)一(yi)定的(de)(de)(de)(de)(de)(de)(de)優勢。首(shou)先，HJT的(de)(de)(de)(de)(de)(de)(de)壽命較長(chang)(chang)。由于(yu)HJT采用(yong)了多層異質結構，可(ke)(ke)(ke)以(yi)有(you)效(xiao)地(di)減少(shao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)光(guang)衰(shuai)減和(he)(he)(he)(he)熱衰(shuai)減，從而延(yan)長(chang)(chang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)使用(yong)壽命。此外，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)材料和(he)(he)(he)(he)工藝也(ye)比(bi)較成熟，可(ke)(ke)(ke)以(yi)保(bao)證電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)穩定性(xing)(xing)和(he)(he)(he)(he)可(ke)(ke)(ke)靠性(xing)(xing)。其次，HJT的(de)(de)(de)(de)(de)(de)(de)可(ke)(ke)(ke)靠性(xing)(xing)較高(gao)。HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)結構簡單，沒有(you)PN結，因(yin)此不會出現PN結老(lao)化(hua)和(he)(he)(he)(he)漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)等問(wen)題。同時，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)溫度(du)系數較低，可(ke)(ke)(ke)以(yi)在(zai)(zai)高(gao)溫環(huan)境下保(bao)持較高(gao)的(de)(de)(de)(de)(de)(de)(de)轉(zhuan)換效(xiao)率，不會因(yin)為溫度(du)變化(hua)而影響電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)性(xing)(xing)能(neng)(neng)(neng)。總(zong)的(de)(de)(de)(de)(de)(de)(de)來說，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)具(ju)有(you)較長(chang)(chang)的(de)(de)(de)(de)(de)(de)(de)壽命和(he)(he)(he)(he)較高(gao)的(de)(de)(de)(de)(de)(de)(de)可(ke)(ke)(ke)靠性(xing)(xing)，這也(ye)是(shi)(shi)其在(zai)(zai)太(tai)陽能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)領域備受關注(zhu)的(de)(de)(de)(de)(de)(de)(de)原因(yin)之一(yi)。但是(shi)(shi)，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)成本較高(gao)，還需要進(jin)一(yi)步的(de)(de)(de)(de)(de)(de)(de)技(ji)術改進(jin)和(he)(he)(he)(he)成本降低才能(neng)(neng)(neng)在(zai)(zai)市場上得到廣泛應用(yong)。

HJT電(dian)池整線解決方(fang)案，制(zhi)絨(rong)(rong)清(qing)洗的(de)(de)(de)主要目的(de)(de)(de)有，1去除硅(gui)片表面(mian)(mian)(mian)的(de)(de)(de)污染和(he)損(sun)傷層；2利(li)用KOH腐蝕(shi)液對n型硅(gui)片進行各項(xiang)異(yi)性腐蝕(shi)，將(jiang)Si（100）晶面(mian)(mian)(mian)腐蝕(shi)為(wei)Si（111）晶面(mian)(mian)(mian)的(de)(de)(de)四(si)方(fang)椎體結(jie)(jie)(jie)構（“金字塔結(jie)(jie)(jie)構”），即在(zai)硅(gui)片表面(mian)(mian)(mian)形成(cheng)絨(rong)(rong)面(mian)(mian)(mian)，可(ke)將(jiang)硅(gui)片表面(mian)(mian)(mian)反射率降低至12.5%以下，從(cong)而產生更多的(de)(de)(de)光(guang)生載(zai)流(liu)子；3形成(cheng)潔(jie)凈硅(gui)片表面(mian)(mian)(mian)，由于HJT電(dian)池中硅(gui)片襯底表面(mian)(mian)(mian)直接(jie)為(wei)異(yi)質結(jie)(jie)(jie)界(jie)面(mian)(mian)(mian)的(de)(de)(de)一部(bu)分，避免不(bu)(bu)(bu)潔(jie)凈引(yin)進的(de)(de)(de)缺陷和(he)雜質而帶來的(de)(de)(de)結(jie)(jie)(jie)界(jie)面(mian)(mian)(mian)處載(zai)流(liu)子的(de)(de)(de)復合。堿溶液濃(nong)度(du)(du)較低時(shi)(shi)，單晶硅(gui)的(de)(de)(de)(100)與(111)晶面(mian)(mian)(mian)的(de)(de)(de)腐蝕(shi)速度(du)(du)差別比(bi)較明顯，速度(du)(du)的(de)(de)(de)比(bi)值被稱為(wei)各向異(yi)性因子(anisotropicfactorAF)；因此改變(bian)堿溶液的(de)(de)(de)濃(nong)度(du)(du)及溫度(du)(du)，可(ke)以有效(xiao)地(di)改變(bian)AF，使(shi)得在(zai)不(bu)(bu)(bu)同(tong)方(fang)向上的(de)(de)(de)速度(du)(du)不(bu)(bu)(bu)同(tong)，在(zai)硅(gui)片表面(mian)(mian)(mian)形成(cheng)密集分布的(de)(de)(de)“金字塔”結(jie)(jie)(jie)構的(de)(de)(de)減反射絨(rong)(rong)面(mian)(mian)(mian)；在(zai)制(zhi)絨(rong)(rong)工(gong)(gong)序，絨(rong)(rong)面(mian)(mian)(mian)大小為(wei)主要指標，一般可(ke)通過添加劑的(de)(de)(de)選(xuan)擇、工(gong)(gong)藝配比(bi)的(de)(de)(de)變(bian)化、工(gong)(gong)藝溫度(du)(du)及工(gong)(gong)藝時(shi)(shi)間等(deng)來進行調節控制(zhi)。HJT光(guang)伏技術是一種高效(xiao)、環保的(de)(de)(de)太陽能轉換技術。

太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)是一種(zhong)高(gao)效(xiao)的(de)(de)(de)太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)，其全(quan)稱為“Heterojunction with Intrinsic Thin-layer”，即(ji)異質結內在薄層太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)。它(ta)采用了(le)多層異質結結構，包括(kuo)p型(xing)硅(gui)、n型(xing)硅(gui)和非晶(jing)硅(gui)等材料(liao)，通過在不同材料(liao)之(zhi)間形成異質結，實現(xian)了(le)電(dian)荷的(de)(de)(de)分(fen)離和收集，從而提(ti)高(gao)了(le)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)的(de)(de)(de)光(guang)電(dian)轉(zhuan)(zhuan)換效(xiao)率(lv)。相比(bi)于傳(chuan)統的(de)(de)(de)太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)，太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)具有(you)以下(xia)優點(dian)：1.高(gao)效(xiao)率(lv)：太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)的(de)(de)(de)光(guang)電(dian)轉(zhuan)(zhuan)換效(xiao)率(lv)可(ke)(ke)以達到22%以上(shang)，比(bi)傳(chuan)統的(de)(de)(de)太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)高(gao)出很多。2.穩(wen)定(ding)性(xing)好(hao)：太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)的(de)(de)(de)穩(wen)定(ding)性(xing)比(bi)傳(chuan)統的(de)(de)(de)太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)更好(hao)，可(ke)(ke)以在高(gao)溫、低(di)光(guang)等環境(jing)下(xia)保(bao)(bao)持較(jiao)高(gao)的(de)(de)(de)效(xiao)率(lv)。3.環保(bao)(bao)：太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)采用的(de)(de)(de)材料(liao)都是環保(bao)(bao)的(de)(de)(de)，不會(hui)對環境(jing)造(zao)成污(wu)染(ran)。4.適(shi)應性(xing)強：太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)可(ke)(ke)以適(shi)應不同的(de)(de)(de)光(guang)照(zhao)條(tiao)件，可(ke)(ke)以在弱光(guang)和強光(guang)環境(jing)下(xia)都有(you)較(jiao)好(hao)的(de)(de)(de)效(xiao)果。總之(zhi)，太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)是一種(zhong)高(gao)效(xiao)、穩(wen)定(ding)、環保(bao)(bao)、適(shi)應性(xing)強的(de)(de)(de)太(tai)(tai)(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)(neng)電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)，具有(you)廣泛的(de)(de)(de)應用前景。HJT電(dian)池(chi)(chi)(chi)(chi)(chi)(chi)是一種(zhong)綠色能(neng)(neng)(neng)(neng)源技術，可(ke)(ke)以有(you)效(xiao)降低(di)碳排放和環境(jing)污(wu)染(ran)，為保(bao)(bao)護環境(jing)做(zuo)出了(le)積極貢(gong)獻。合肥光(guang)伏HJTPVD

HJT電(dian)(dian)池的(de)制(zhi)造工藝與PERC電(dian)(dian)池相似，但結構更加優化(hua)，使其具(ju)有更高的(de)性(xing)能。北(bei)京自動化(hua)HJT金屬化(hua)設備

HJT的(de)(de)(de)制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)工(gong)藝(yi)主要包(bao)括以下幾(ji)個步(bu)驟：1.基(ji)片制(zhi)(zhi)(zhi)備：選擇合適的(de)(de)(de)基(ji)片材料(liao)，如硅、鎵砷化(hua)鎵等(deng)，進(jin)行(xing)表面(mian)處(chu)(chu)理和清洗，以保證后(hou)續工(gong)藝(yi)的(de)(de)(de)順利(li)進(jin)行(xing)。2.沉(chen)積薄膜：利(li)用(yong)化(hua)學氣相沉(chen)積、物理的(de)(de)(de)氣相沉(chen)積等(deng)技術(shu)，在(zai)基(ji)片表面(mian)沉(chen)積一層(ceng)(ceng)或多(duo)層(ceng)(ceng)薄膜，如n型或p型摻(chan)雜(za)(za)層(ceng)(ceng)、金(jin)屬電(dian)極等(deng)。3.制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)異(yi)(yi)質(zhi)(zhi)結：通過摻(chan)雜(za)(za)、擴散(san)、離子注(zhu)入等(deng)方(fang)法，在(zai)基(ji)片表面(mian)形成n型和p型半(ban)導(dao)體(ti)材料(liao)的(de)(de)(de)異(yi)(yi)質(zhi)(zhi)結。4.退火處(chu)(chu)理：將制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)好的(de)(de)(de)異(yi)(yi)質(zhi)(zhi)結進(jin)行(xing)高溫退火處(chu)(chu)理，以提高其電(dian)學性能和穩定性。5.制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)封(feng)裝：將制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)好的(de)(de)(de)光伏異(yi)(yi)質(zhi)(zhi)結進(jin)行(xing)封(feng)裝，以保護其免受(shou)外(wai)界環境的(de)(de)(de)影響(xiang)，并方(fang)便其在(zai)實際應(ying)用(yong)中(zhong)的(de)(de)(de)使用(yong)。以上是(shi)光伏異(yi)(yi)質(zhi)(zhi)結的(de)(de)(de)制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)工(gong)藝(yi)的(de)(de)(de)基(ji)本步(bu)驟，不同的(de)(de)(de)制(zhi)(zhi)(zhi)造(zao)(zao)(zao)(zao)(zao)工(gong)藝(yi)可能會有(you)所不同，但(dan)總體(ti)上都(dou)是(shi)在(zai)這些基(ji)本步(bu)驟的(de)(de)(de)基(ji)礎上進(jin)行(xing)的(de)(de)(de)。北京自動化(hua)HJT金(jin)屬化(hua)設備

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